Dual PNP Bipolar Transistor in a SOT-363-6 package. Features a collector-emitter voltage of 65V, collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum hFE of 220 and a maximum power dissipation of 380mW. Operates across a temperature range of -55°C to 150°C. Packaged on a 10000-unit tape and reel, this component is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-363-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC856BDW1T3G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.039inch |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -65V |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC856BDW1T3G Datasheet
Download the complete datasheet for Onsemi BC856BDW1T3G to view detailed technical specifications.
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