PNP bipolar junction transistor in a SOT-23-3 package. Features a 65V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C. Packaged in tape and reel for automated assembly.
Frequency100MHz
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC856BLT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.94mm
hFE Min
220
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-65V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856BLT1G Datasheet
Download the complete datasheet for Onsemi BC856BLT1G to view detailed technical specifications.
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