PNP Bipolar Junction Transistor (BJT) with a 65V Collector-Emitter Voltage (VCEO) and a maximum collector current of 100mA. Features a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Housed in a compact 3-pin SC-70 package, this component offers a power dissipation of 150mW and operates across a temperature range of -55°C to 150°C. Supplied on tape and reel for automated assembly.
Frequency100MHz
PackageSC
Current Rating-100mA
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi BC856BWT1G technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.9mm
hFE Min
150
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-65V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856BWT1G Datasheet
Download the complete datasheet for Onsemi BC856BWT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
