PNP Epitaxial Silicon Transistor, 3000-REEL. Features a 65V collector-emitter voltage (VCEO) and a -100mA maximum collector current. Offers a transition frequency of 150MHz and a minimum hFE of 110. Packaged in a SOT-23 surface mount case with tin, matte contact plating. Operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 310mW.
Frequency150MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC856CMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
0.93mm
hFE Min
110
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-65V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856CMTF Datasheet
Download the complete datasheet for Onsemi BC856CMTF to view detailed technical specifications.
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