PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with operating temperatures from -55°C to 150°C. Supplied on tape and reel.
Frequency100MHz
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC857BLT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC857BLT1G Datasheet
Download the complete datasheet for Onsemi BC857BLT1G to view detailed technical specifications.
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