Dual PNP bipolar junction transistor in a SOT-363-6 package, designed for general-purpose amplification and switching applications. Features a collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 420 and a collector-emitter saturation voltage of -650mV. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-363-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC857CDW1T1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 420 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 380mW |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC857CDW1T1 Datasheet
Download the complete datasheet for Onsemi BC857CDW1T1 to view detailed technical specifications.
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