Dual PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a collector-emitter voltage (VCEO) of 45V, collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum hFE of 420 and a maximum power dissipation of 380mW. Operates across a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-363-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC857CDW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC857CDW1T1G Datasheet
Download the complete datasheet for Onsemi BC857CDW1T1G to view detailed technical specifications.
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