PNP Epitaxial Silicon Transistor for surface mount applications. Features a collector-emitter voltage of 30V, a maximum collector current of 100mA, and a transition frequency of 150MHz. Housed in a compact SOT-23 package with tin, matte contact plating. Operating temperature range from -65°C to 150°C, with a maximum power dissipation of 310mW. This lead-free, RoHS compliant component is supplied on a 3000-piece tape and reel.
Frequency150MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC858BMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
0.93mm
hFE Min
110
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-30V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC858BMTF Datasheet
Download the complete datasheet for Onsemi BC858BMTF to view detailed technical specifications.
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