PNP Epitaxial Silicon Transistor for surface mount applications. Features a 30V Collector-Emitter Voltage (VCEO) and a -100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Packaged in a compact SOT-23 case, this component operates across a wide temperature range from -65°C to 150°C.
Frequency150MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC858CMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
0.93mm
hFE Min
110
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-30V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC858CMTF Datasheet
Download the complete datasheet for Onsemi BC858CMTF to view detailed technical specifications.
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