PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 surface mount package. Features a collector-emitter voltage (VCEO) of 30V, a maximum collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 420 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC859CLT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 420 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC859CLT1 Datasheet
Download the complete datasheet for Onsemi BC859CLT1 to view detailed technical specifications.
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