PNP Epitaxial Silicon Transistor, SOT-23 package. Features a collector-emitter voltage (VCEO) of 30V, max collector current of 100mA, and a transition frequency of 150MHz. Offers a minimum hFE of 110 and a max power dissipation of 310mW. Operates across a wide temperature range from -65°C to 150°C. Surface mount component supplied on a 3000-piece tape and reel.
Onsemi BC859CMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC859CMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
