PNP bipolar junction transistor featuring an 80V collector-emitter breakdown voltage and 100V collector-base voltage. This component offers a DC current gain (hFE) range of 100 to 250 and a maximum collector current of 1.5A. Operating at a transition frequency of 50MHz, it is housed in a SOT-223-4 package with tin, matte contact plating. Maximum power dissipation is 1.5W, with operating temperatures from -65°C to 150°C.
Frequency50MHz
PackageSOT-223-4
PolarityPNP
Power1.5W
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Technical Specifications
Onsemi BCP53-16T3G technical specifications.
General
Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
0.065inch
hFE Min
25
Lead Free
Lead Free
Length
0.263inch
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Frequency
35MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
Width
0.146inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BCP53-16T3G Datasheet
Download the complete datasheet for Onsemi BCP53-16T3G to view detailed technical specifications.
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