PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Operates with a transition frequency of 50MHz and a minimum hFE of 25. Packaged in a SOT-223 surface mount case, this transistor offers a maximum power dissipation of 1.5W and a wide operating temperature range from -65°C to 150°C.
Frequency50MHz
PackageSOT-223
Voltage80V
Current15A
Quick Jump:
Technical Specifications
Onsemi BCP53T1 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 15A |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BCP53T1 Datasheet
Download the complete datasheet for Onsemi BCP53T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
