PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Operates with a transition frequency of 50MHz and a minimum hFE of 25. Packaged in a SOT-223 surface mount case, this transistor offers a maximum power dissipation of 1.5W and a wide operating temperature range from -65°C to 150°C.
Frequency50MHz
PackageSOT-223
Voltage80V
Current15A
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Technical Specifications
Onsemi BCP53T1 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current
15A
Current Rating
-15A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
hFE Min
25
Lead Free
Contains Lead
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
10
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.5W
RoHS Compliant
No
Transition Frequency
50MHz
Voltage
80V
DC Rated Voltage
-80V
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BCP53T1 Datasheet
Download the complete datasheet for Onsemi BCP53T1 to view detailed technical specifications.
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