NPN bipolar junction transistor in SOT-23 package, designed for general-purpose amplification. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 60V. Offers a minimum hFE of 200 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Supplied on a 3000-piece tape and reel, this lead-free and RoHS compliant component is suitable for surface mounting.
PackageSOT-23
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi BCV72 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Height
0.93mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
60V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCV72 Datasheet
Download the complete datasheet for Onsemi BCV72 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.