
NPN bipolar junction transistor in SOT-23 surface mount package. Features a collector-emitter voltage (VCEO) of 32V, a maximum collector current of 500mA, and a transition frequency of 200MHz. Offers a minimum DC current gain (hFE) of 420 and a collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 350mW. Packaged in tape and reel.
Onsemi BCW33 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 32V |
| Weight | 0.03g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BCW33 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
