
NPN bipolar junction transistor in SOT-23 package for surface mounting. Features a 32V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 125MHz. Maximum power dissipation is 350mW, with a maximum operating temperature of 150°C.
Onsemi BCW60A technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 550mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| Series | BCW60A |
| Termination | SMD/SMT |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 32V |
| Weight | 0.03g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BCW60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
