NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter voltage (VCEO) and 800mA continuous collector current. Operates with a minimum hFE of 35 and a transition frequency of 100MHz. Packaged in a SOT-23-3 surface mount configuration, this transistor is rated for a maximum power dissipation of 225mW and operates across a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-23-3
Current Rating800mA
MountingSurface Mount
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Technical Specifications
Onsemi BCW65ALT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 700mV |
| Continuous Collector Current | 800mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 35 |
| Lead Free | Contains Lead |
| Max Collector Current | 20nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BCW65ALT1 Datasheet
Download the complete datasheet for Onsemi BCW65ALT1 to view detailed technical specifications.
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