NPN bipolar junction transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a 100MHz transition frequency and a minimum hFE of 110. Maximum power dissipation is 300mW. Operates from -55°C to 150°C.
Frequency100MHz
PackageSOT-23-3
Current Rating800mA
PolarityNPN
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Technical Specifications
Onsemi BCW66GLT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
800mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.94mm
hFE Min
110
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCW66GLT1G Datasheet
Download the complete datasheet for Onsemi BCW66GLT1G to view detailed technical specifications.
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