PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a collector-emitter breakdown voltage of 45V, a maximum collector current of 100mA, and a transition frequency of 150MHz. Offers a minimum DC current gain (hFE) of 120. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Supplied on tape and reel.
Onsemi BCW69 technical specifications.
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