
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -60V collector-emitter voltage (VCEO) and a 200mA continuous collector current. Housed in a compact SOT-23 surface-mount package, this component offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 350mW. Operating across a wide temperature range from -55°C to 150°C, it is supplied on a 3000-piece tape and reel.
Onsemi BCW89 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | -60V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.93mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BCW89 to view detailed technical specifications.
No datasheet is available for this part.
