The BCX599_D26Z is a TO-92-3 packaged NPN bipolar junction transistor with a maximum power dissipation of 500W. It features a minimum current gain of 110 and can withstand collector-emitter voltages of up to -30V. The transistor is available in quantities of 2000 and is packaged on tape and reel for easy handling. It is suitable for use in through hole mounting applications and has a collector base voltage rating of -30V.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BCX599_D26Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | -30V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 110 |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BCX599_D26Z Datasheet
Download the complete datasheet for Onsemi BCX599_D26Z to view detailed technical specifications.
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