PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 45V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 250 and a gain bandwidth product of 250MHz. Packaged in a SOT-23 surface mount case, this component is supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
Frequency1MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi BCX71J technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-550mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
550mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
250MHz
Height
0.97mm
hFE Min
250
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-45V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCX71J Datasheet
Download the complete datasheet for Onsemi BCX71J to view detailed technical specifications.
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