PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 120 and a maximum collector-emitter saturation voltage of 600mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
Onsemi BCX79 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | BCX79 |
| DC Rated Voltage | -45V |
| Weight | 0.2g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BCX79 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.