NPN Power Bipolar Junction Transistor (BJT) with a 1.5A continuous collector current and 45V collector-emitter breakdown voltage. Features a low collector-emitter saturation voltage of 500mV and a minimum DC current gain (hFE) of 40. Encased in a TO-126 package for through-hole mounting, this transistor operates from -55°C to 150°C with a maximum power dissipation of 1.25W. It is lead-free, RoHS compliant, and supplied in a rail/tube package.
PackageTO-126
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD1356STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD1356STU Datasheet
Download the complete datasheet for Onsemi BD1356STU to view detailed technical specifications.
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