PNP Bipolar Junction Transistor (BJT) for power applications. Features a 45V collector-emitter breakdown voltage and a continuous collector current rating of 1.5A. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.25W. Packaged in a TO-126 through-hole mount with tin, matte plating.
PackageTO-126
Current Rating-1.5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BD13616S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD13616S Datasheet
Download the complete datasheet for Onsemi BD13616S to view detailed technical specifications.
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