NPN Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Features a collector-emitter saturation voltage of 500mV, emitter-base voltage of 5V, and a maximum power dissipation of 1.25W. Housed in a TO-126 package with tin, matte plating and through-hole mounting. Operates across a temperature range of -55°C to 150°C.
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| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
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These are design resources that include the Onsemi BD13916S
Official onsemi notice (PD24134XB) regarding the discontinuance of various standard parts, including logic ICs, voltage regulators, and power transistors as of July 2021.
