NPN Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Features a collector-emitter saturation voltage of 500mV, emitter-base voltage of 5V, and a maximum power dissipation of 1.25W. Housed in a TO-126 package with tin, matte plating and through-hole mounting. Operates across a temperature range of -55°C to 150°C.
PackageTO-126
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD13916S technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Height
11mm
hFE Min
40
Lead Free
Lead Free
Length
8mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Elements
1
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.25W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
DC Rated Voltage
80V
Weight
0.761g
Width
3.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD13916S Datasheet
Download the complete datasheet for Onsemi BD13916S to view detailed technical specifications.
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