Medium power NPN bipolar junction transistor (BJT) with a 3A collector current rating and 80V collector-emitter breakdown voltage. Features include a 3MHz transition frequency, 800mV collector-emitter saturation voltage, and a minimum hFE of 63. Packaged in a TO-225-3 case with tin, matte contact plating, this RoHS compliant component operates from -65°C to 150°C with a 30W power dissipation.
Frequency3MHz
PackageTO-225-3
Current Rating3A
PolarityNPN
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Technical Specifications
Onsemi BD179G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 63 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD179G Datasheet
Download the complete datasheet for Onsemi BD179G to view detailed technical specifications.
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