PNP Bipolar Junction Transistor (BJT) in a TO-225 package, featuring a 45V collector-emitter breakdown voltage and a maximum collector current of 2A. This power transistor offers a 600mV collector-emitter saturation voltage and a 3MHz transition frequency. With a minimum hFE of 40 and a maximum power dissipation of 25W, it operates across a temperature range of -55°C to 150°C. The component is lead-free, RoHS compliant, and supplied in bulk packaging.
Frequency3MHz
PackageTO-225-3
Current Rating-2A
PolarityPNP
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Technical Specifications
Onsemi BD234G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BD234 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD234G Datasheet
Download the complete datasheet for Onsemi BD234G to view detailed technical specifications.
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