
NPN bipolar power transistor featuring an 80V collector-emitter breakdown voltage and a 2A maximum collector current. This component offers a 25W maximum power dissipation and a 3MHz transition frequency. With a minimum hFE of 40 and a collector-emitter saturation voltage of 600mV, it is housed in a TO-225 package and is RoHS compliant. Operating temperature range spans from -55°C to 150°C.
Onsemi BD237G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD237G to view detailed technical specifications.
No datasheet is available for this part.
