NPN Epitaxial Silicon Bipolar Power Transistor, TO-126 package, featuring a 2A maximum collector current and 80V collector-emitter voltage (VCEO). This through-hole mounted component offers a 25W power dissipation, a transition frequency of 3MHz, and a minimum DC current gain (hFE) of 25. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency3MHz
PackageTO-126
Current Rating2A
MountingThrough Hole
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Technical Specifications
Onsemi BD237STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 11mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD237STU Datasheet
Download the complete datasheet for Onsemi BD237STU to view detailed technical specifications.
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