The BD242BG is a PNP bipolar junction transistor with a collector base voltage of 115V and a collector emitter breakdown voltage of 80V. It has a maximum collector current of 3A and a maximum power dissipation of 40W. The transistor operates over a temperature range of -65°C to 150°C and is packaged in a TO-220-3 case. It is lead free and RoHS compliant.
PackageTO-220-3
Current Rating-3A
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi BD242BG technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 115V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Contact Plating | Tin, Matte |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD242BG Datasheet
Download the complete datasheet for Onsemi BD242BG to view detailed technical specifications.
No datasheet is available for this part.
Product Images
