NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 6A and a collector-emitter voltage (VCEO) of 80V. Offers a maximum power dissipation of 65W and a minimum hFE of 15. Operates across a temperature range of -65°C to 150°C. This lead-free, RoHS-compliant component is supplied in bulk packaging.
PackageTO-220-3
Current Rating6A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD243B technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 65W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD243B Datasheet
Download the complete datasheet for Onsemi BD243B to view detailed technical specifications.
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