Medium power NPN bipolar junction transistor in a TO-225 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 32V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. With a maximum power dissipation of 36W, this lead-free and RoHS compliant component operates across a wide temperature range from -55°C to 150°C. Supplied in bulk packaging with 500 units per box.
Frequency3MHz
PackageTO-225-3
Current Rating4A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BD435G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 4A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD435G Datasheet
Download the complete datasheet for Onsemi BD435G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
