
Medium power NPN bipolar junction transistor in a TO-126 through-hole package. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 32V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Maximum power dissipation is 36W, with an operating temperature range of -65°C to 150°C. Lead-free and RoHS compliant.
Onsemi BD435STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 36W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Voltage | 32V |
| DC Rated Voltage | 32V |
| Weight | 0.026843oz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD435STU to view detailed technical specifications.
No datasheet is available for this part.
