The BD439 is a TO-126-3 packaged NPN transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 100uA. It has a gain bandwidth product of 3MHz and a minimum current gain of 20. The transistor is rated for a maximum power dissipation of 36W and operates over a temperature range of -55°C to 150°C. It is not RoHS compliant and is available in bulk packaging.
PackageTO-126-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD439 technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector-emitter Voltage-Max | 800mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 20 |
| Max Collector Current | 100uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BD439 Datasheet
Download the complete datasheet for Onsemi BD439 to view detailed technical specifications.
No datasheet is available for this part.