The BD442G PNP transistor from Onsemi features a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. It has a maximum power dissipation of 36W and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a TO-225-3 case and is compliant with RoHS regulations.
PackageTO-225-3
Current Rating-4A
PolarityPNP
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Technical Specifications
Onsemi BD442G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | BD442 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD442G Datasheet
Download the complete datasheet for Onsemi BD442G to view detailed technical specifications.
No datasheet is available for this part.
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