The BD536J PNP transistor is a TO-220-3 packaged device with a maximum collector-emitter voltage of 60V and a maximum collector current of 8A. It has a maximum power dissipation of 50W and operates over a temperature range of -65°C to 150°C. The transistor has a gain bandwidth product of 12MHz and a minimum current gain of 20. It is RoHS compliant and lead free.
PackageTO-220-3
Current Rating-8A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BD536J technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 12MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 12MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD536J Datasheet
Download the complete datasheet for Onsemi BD536J to view detailed technical specifications.
No datasheet is available for this part.