NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 12MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 50W.
Frequency12MHz
PackageTO-220-3
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi BD537K technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 12MHz |
| Gain Bandwidth Product | 12MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Series | BD537 |
| Transition Frequency | 12MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BD537K Datasheet
Download the complete datasheet for Onsemi BD537K to view detailed technical specifications.
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