PNP Darlington Bipolar Power Transistor featuring a 45V collector-emitter voltage and a continuous collector current of 4A. This through-hole component offers a minimum hFE of 750 and a maximum power dissipation of 14W. Packaged in TO-126 with tin, matte plating, it operates from -65°C to 150°C and is RoHS compliant.
PackageTO-126
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BD676AS technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 2.8V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 14W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 14W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD676AS Datasheet
Download the complete datasheet for Onsemi BD676AS to view detailed technical specifications.
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