
PNP Darlington Bipolar Power Transistor featuring a 60V collector-emitter voltage and a continuous collector current of -4A. This through-hole mounted component is housed in a TO-126 package with tin, matte plating. It offers a minimum hFE of 750 and a maximum power dissipation of 14W, operating within a temperature range of -65°C to 150°C. The transistor is lead-free and RoHS compliant.
Onsemi BD678AS technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.8V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 11mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 14W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD678AS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
