PNP Darlington bipolar power transistor featuring a 80V collector-emitter breakdown voltage and 4A continuous collector current. This through-hole component offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 14W. Housed in a TO-126 package with tin matte plating, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-126
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BD680AS technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
2.8V
Contact Plating
Tin, Matte
Continuous Collector Current
-4A
Current Rating
-4A
Emitter Base Voltage (VEBO)
-5V
hFE Min
750
Lead Free
Lead Free
Max Breakdown Voltage
80V
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
14W
Mount
Through Hole
Number of Elements
1
Package Quantity
250
Packaging
Bulk
Polarity
PNP
Power Dissipation
14W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
DC Rated Voltage
-80V
Weight
0.761g
Compliance
RoHS
Compliant
Datasheet
Onsemi BD680AS Datasheet
Download the complete datasheet for Onsemi BD680AS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.