NPN Darlington transistor in a TO-225 package, featuring a 100V collector-emitter breakdown voltage and a 4A maximum collector current. This component offers a high DC current gain (hFE) of 750 minimum and a 2.5V collector-emitter saturation voltage. Maximum power dissipation is rated at 40W, with operating temperatures ranging from -55°C to 150°C. The device is RoHS and Halogen Free compliant.
PackageTO-225-3
Current Rating4A
PolarityNPN
Power40W
Quick Jump:
Technical Specifications
Onsemi BD681G technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Halogen Free
Halogen Free
Height
11.04mm
hFE Min
750
Lead Free
Lead Free
Length
7.74mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
NPN
Power Dissipation
40W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Width
2.66mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD681G Datasheet
Download the complete datasheet for Onsemi BD681G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
