
NPN Darlington transistor in a TO-225 package, featuring a 100V collector-emitter breakdown voltage and a 4A maximum collector current. This component offers a high DC current gain (hFE) of 750 minimum and a 2.5V collector-emitter saturation voltage. Maximum power dissipation is rated at 40W, with operating temperatures ranging from -55°C to 150°C. The device is RoHS and Halogen Free compliant.
Onsemi BD681G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 11.04mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 2.66mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD681G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
