PNP Bipolar Junction Transistor (BJT) with a 4A maximum collector current and 60V collector-emitter breakdown voltage. Features a 15W power dissipation and a 50MHz transition frequency. Packaged in a TO-225-3 case with tin, matte contact plating. Operates from -65°C to 150°C and is RoHS compliant.
Frequency50MHz
PackageTO-225-3
Current Rating-4A
PolarityPNP
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Technical Specifications
Onsemi BD788G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD788G Datasheet
Download the complete datasheet for Onsemi BD788G to view detailed technical specifications.
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