High power NPN bipolar junction transistor in a TO-220-3 package. Features a maximum collector current of 10A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 1.5MHz. Maximum power dissipation is 90W, with an operating temperature range of -55°C to 150°C. Packaged in a 50-unit tube, this RoHS compliant component has tin, matte contact plating.
Frequency1.5MHz
PackageTO-220-3
Current Rating10A
PolarityNPN
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Technical Specifications
Onsemi BD809G technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1.1V
Contact Plating
Tin, Matte
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
Frequency
1.5MHz
Gain Bandwidth Product
1.5MHz
Height
15.75mm
hFE Min
30
Lead Free
Lead Free
Length
10.28mm
Max Breakdown Voltage
80V
Max Collector Current
10A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
90W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
1.5MHz
DC Rated Voltage
80V
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD809G Datasheet
Download the complete datasheet for Onsemi BD809G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.