PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package, featuring a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 80V. This component offers a minimum DC current gain (hFE) of 30 and a transition frequency of 1.5MHz. With a maximum power dissipation of 90W and an operating temperature range of -55°C to 150°C, it is suitable for high-power applications. The transistor is RoHS compliant and supplied in a 50-piece tube.
Frequency1.5MHz
PackageTO-220-3
Current Rating10A
PolarityPNP
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Technical Specifications
Onsemi BD810G technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1.1V
Contact Plating
Tin, Matte
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
Frequency
1.5MHz
Gain Bandwidth Product
1.5MHz
hFE Min
30
Lead Free
Lead Free
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
90W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BD810
Transition Frequency
1.5MHz
DC Rated Voltage
-80V
Compliance
RoHS
Compliant
Datasheet
Onsemi BD810G Datasheet
Download the complete datasheet for Onsemi BD810G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.