PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package, featuring a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 80V. This component offers a minimum DC current gain (hFE) of 30 and a transition frequency of 1.5MHz. With a maximum power dissipation of 90W and an operating temperature range of -55°C to 150°C, it is suitable for high-power applications. The transistor is RoHS compliant and supplied in a 50-piece tube.
Frequency1.5MHz
PackageTO-220-3
Current Rating10A
PolarityPNP
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Technical Specifications
Onsemi BD810G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.1V |
| Contact Plating | Tin, Matte |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 1.5MHz |
| Gain Bandwidth Product | 1.5MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BD810 |
| Transition Frequency | 1.5MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD810G Datasheet
Download the complete datasheet for Onsemi BD810G to view detailed technical specifications.
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