The BDV65B is a TO-247-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 10A. It has a maximum power dissipation of 125W and operates over a temperature range of -65°C to 150°C. The transistor is not RoHS compliant and contains lead. It is available in a rail or tube packaging quantity of 30.
PackageTO-247-3
Current Rating10A
PolarityNPN
Power125W
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Technical Specifications
Onsemi BDV65B technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 10A |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Lead Free | Contains Lead |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BDV65B Datasheet
Download the complete datasheet for Onsemi BDV65B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.