
NPN Darlington Bipolar Power Transistor, TO-247 package. Features 100V collector-emitter voltage (VCEO) and 10A continuous collector current. Offers a minimum current gain (hFE) of 1000 and a maximum power dissipation of 125W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant with tin, matte contact plating.
Onsemi BDV65BG technical specifications.
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Tin, Matte |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BDV65BG to view detailed technical specifications.
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