
NPN Darlington bipolar junction transistor (BJT) with a 100V collector-emitter voltage (VCEO) and 15A continuous collector current. Features a maximum power dissipation of 85W and a transition frequency of 4MHz. Packaged in a TO-220-3 configuration, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi BDW42G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 15A |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.75mm |
| Lead Free | Lead Free |
| Length | 10.53mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BDW42G to view detailed technical specifications.
No datasheet is available for this part.
