NPN Epitaxial Silicon Darlington Bipolar Transistor in a TO-220-3 package. Features a 100V Collector-Emitter Voltage (VCEO) and 100V Collector Base Voltage (VCBO). Offers a continuous collector current rating of 12A with a maximum power dissipation of 80W. Minimum DC current gain (hFE) is 1000. Operates from -65°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating12A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BDW93CTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 9.4mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BDW93CTU Datasheet
Download the complete datasheet for Onsemi BDW93CTU to view detailed technical specifications.
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