The BDX53BG is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a collector-emitter saturation voltage of 2V. It has a maximum collector current of 8A and a maximum power dissipation of 65W. The transistor is packaged in a TO-220-3 package and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
PackageTO-220-3
Current Rating8A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BDX53BG technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Number of Circuits | 8 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BDX53BG Datasheet
Download the complete datasheet for Onsemi BDX53BG to view detailed technical specifications.
No datasheet is available for this part.
Product Images
